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Infineon HEXFET N-Channel MOSFET£2.08
Infineon HEXFET N-Channel MOSFET, 180 A, 100 V, 3-Pin D2PAK, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 4.7 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power ...Infineon HEXFET N-Channel MOSFET, 180 A, 100 V, 3-Pin D2PAK, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 4.7 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 375 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 10.67mm, MPN: IRFS4010TRLPBF