ON Semiconductor HGTG20N60B3D Transistor

Product Overview The HGTG20N60B3D is a 600V N-channel IGBT with anti-parallel hyper fast diode. The UFS series MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on ...Product Overview The HGTG20N60B3D is a 600V N-channel IGBT with anti-parallel hyper fast diode.

The UFS series MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25 C and 150 C.

The diode used in anti-parallel with the IGBT is the RHRP3060. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential. Fairchild offers an extensive portfolio of IGBT devices by various process technologies from 300V to greater than 1200V.

Optimized manufacturing process results in better control and repeatability of the top-side structure, resulting in tighter specifications and better EMI performance. This product is general usage and suitable for many different applications. 140ns at TJ = 150 C Fall time Applications Motor Drive & Control, Power Management, Industrial WARNING: Cancer and Reproductive Harm - .

This listing is for Each. Power Dissipation Pd: 165 hazardous: false Product Range: - Transistor Case Style: TO-247 Collector Emitter Saturation Voltage: 1.8 usEccn: EAR99 MSL: - Collector Emitter Saturation Voltage Vce(on): 1.8 Collector Emitter Voltage Max: 600 Operating Temperature Max: 150 Collector Emitter Voltage V(br)ceo: 600 Power Dissipation: 165 Transistor Mounting: Through Hole Continuous Collector Current: 40 No. of Pins: 3 DC Collector Current: 40 SVHC: Lead